Ultra Compact, High Current and High Temperature Semiconductor Packaging

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(1) Fully assembled hybrid power module of the present invention using double metal leadframessemi-transparent view of the novel SiC haU·bridge power module shown in (1), showing the botlom metal leadframe
Zheng Shen, Ph.D.
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High-temperature, wirebondless, injection-molded, ultra-compact hybrid power module

US Patent 8,120,153 B1

A hybrid power module packaging technology that incorporates lead frames and injection-molded polymers to encapsulate a semiconductor in order to promote stable operation well beyond 300°C

Wide band-gap semiconductors, like silicon carbide, are an obvious choice for use in high-power electronics that operate under high temperatures. By utilizing materials that can handle these extreme temperatures, the need for temperature management additions, such as bulky fans and liquid cooling systems, is eliminated. However, one major impediment to capitalizing on all of the benefits of these conductors is the lack of reliable high-temperature device packaging. While there has been some progress in electronics’ packaging in the last two decades, all the available approaches have significant limitations. Metal and ceramic packaging can accommodate temperatures of up to 400°C, however, they are only suitable for low current applications. Plastic packaging offers a low cost alternative with high manufacturability and compact package size, however, is unsuitable for temperatures above 150°C.

Technical Details

UCF researchers have developed a novel electronics packaging design that addresses the primary shortcomings of existing products, while leveraging recent advancements in material science. The packaging uses a hybrid design that includes double metal lead frames around the semiconductor and injection-molded high temperature polymer materials to encapsulate it. They have created a packaging that is reliable, has high current-carrying potential and achieves higher overall performance.


  • Low manufacturing cost
  • High current carrying capability with low parasitic impedance
  • Low thermo-mechanical stress and low package thermal resistance
  • No need for additional cooling subsystems
  • 5x reduction in size and 10x reduction in weight from the prior art
  • Easy system integration
  • Increased product quality


  • Semiconductors
  • Electronics
  • Silicon-based semiconductor devices