Dual-Polarity Electrostatic Discharge Protection for Sub- Micron, Mixed Signal, CMOS/BiCMOS Technologies

Technology #30726

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Cross sectional-view of a dual polarity ESD device according to various embodiments of the invention
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Researchers
Juin Liou, Ph.D.
Javier Salcedo
Managed By
Andrea Adkins
Assistant Director 407.823.0138
Patent Protection

Devices with adjustable dual-polarity trigger- and holding-voltage/current for high level of electrostatic discharge protection in sub-micron mixed signal CMOS/BiCMOS integrated circuits

US Patent 7,566,914 B2

Devices with adjustable dual-polarity trigger-and holding-voltage/current for high level of electrostatic discharge protection in sub-micron mixed signal CMOS/BiCMOS integrated

US Patent 7,985,640 B2

Devices with adjustable dual-polarity trigger- and holding-votage/current for high level of electrostatic discharge protection in sub-micron mixed signal CMOS/BiCMOS integrated

US Patent 8,283,695 B2

Device and methods for electrostatic discharge protection in CMOS/BiCMOS mixed signal integrated circuits, with operating input and output voltages higher/lower than the power supply voltage

UCF scientists have developed an innovative device for electrostatic discharge (ESD) protection of advanced complementary metal oxide semiconductor (CMOS) and bipolar CMOS (BiCMOS) technologies. The device and methodologies developed use a dual polarity trigger which greatly improves the voltage carrying potential (several times below and above the power supply voltage) of devices.

Technical Details

The performance and reliability of integrated circuits (IC) are adversely affected by ESD induced between the semi-conductor chips and other objects. A variety of ESD protection techniques have been developed. However, most of these techniques do not address ESD in complementary CMOS or BiCMOS technologies. The ESD problem is further heightened in high performance, dense ICs. These discharges degrade small chip performance and diminish the potential advantages of down scaling. The limitations of standard ESD protection techniques with regard to advanced ICs can be overcome, however, by designing devices with high conductivity. One such type of device is the Silicon Controlled Rectifier (SCR). Guard rings have also been used for ESD protection in dual polarity devices. Unfortunately, they limit the range of voltage that the device can handle.

Benefits

Provides a high level of immunity to electrostatic discharge for advanced CMOS/BiCMOS Dual polarity trigger Scalable Enables current electrostatic discharge devices to be incorporated into CMOS/BiCMOS technologies

Applications

  • IC for electronics such as:
    • Data communication transceivers
    • Industrial control devices
    • Distributive medical communication
    • Monitoring
    • Mixed-signal semiconductor integrated circuits


Additional Technology Numbers: 31488, 32141